ds30269 rev. 3 - 2 1 of 4 MMBT2907AT www.diodes.com diodes incorporated MMBT2907AT pnp small signal surface mount transistor epitaxial planar die construction complementary npn type available (mmbt2222at) ultra-small surface mount package also available in lead free version characteristic symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -600 ma power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g c top view e b n mechanical data notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. case: sot-523, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2): 2f ordering & date code information, see page 2 sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 all dimensions in mm e b c
ds30269 rev. 3 - 2 2 of 4 MMBT2907AT www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -60 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -10 na a v cb = -50v, i e = 0 v cb = -50v, i e = 0, t a = 125 c collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 2) dc current gain h fe 75 100 100 100 50 300 i c = -100a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -1.3 -2.6 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8.0 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = -2.0v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 200 mhz v ce = -20v, i c = -50ma, f = 100mhz switching characteristics turn-on time t off 45 ns delay time t d 10 ns v cc = -30v, i c = -150ma, i b1 = -15ma rise time t r 40 ns turn-off time t off 100 ns storage time t s 80 ns v cc = -6.0v, i c = -150ma, i b1 = i b2 = -15ma fall time t f 30 ns notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free terminal plating part number, please add "-f" suffix to part number above. example: mmbt2907 at-7-f. device packaging shipping MMBT2907AT-7 sot-523 3000/tape & reel (note 3 & 4) ordering information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 code jklm n pr date code key 2f = product type marking code ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) 2fym marking information
ds30269 rev. 3 - 2 3 of 4 MMBT2907AT www.diodes.com i , base current (ma) b fig. 3 typical collector saturation region v,c o llect o r-emitter v o ltage (v) ce 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 i = 1ma c i=10ma c i = 30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 -0.1 -10 -1.0 -30 c, capacitance (pf) reverse voltage (v) fi g . 2 capacitances ( t y pical ) cobo cibo 0 100 200 t , ambient temperature (oc) a fi g . 1 power deratin g curve, total packa g e p , power dissipation (mw) d 0 50 100 150 200
ds30269 rev. 3 - 2 4 of 4 MMBT2907AT www.diodes.com 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 7, gain bandwidth product vs. collector current v=5v ce 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 6, base emitter voltage vs. collector current v=5v ce t = 150c a t = 25c a t = -50c a 1 10 1000 100 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 5, dc current gain vs collector current v= 5v ce t= 150c a t= 25c a t = -50c a 0 0.1 0.2 0.3 0.6 0.5 0.4 1 10 100 1000 i , collector current (ma) c fig. 4, collector emitter saturation voltage vs. collector current v,c o llect o rt o emitter ce(sat) saturation voltage (v) i c i b =10 t = 150c a t=25c a t = -50c a
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